Process for producing an amorphous photoelectric transducer

Details Process for producing an amorphous photoelectric transducer Process for producing an amorphous photoelectric transducer

1991-08-08

1993-04-27

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

427578, 437100, 437101, 136258, 257431, H01L 3118, H01L 310376, H01L 21205

Patent

active

052061809

ABSTRACT:
An amorphous photoelectric transducer of the type that converts light energy to electric energy using a p-n or p-i-n junction in an amorphous semiconductor having a p-type film on the light entrance side is disclosed. The p-type amorphous semiconductor film is formed with gaseous boron trifluoride (BF.sub.3) as a dopant, the film containing boron atoms at a concentration in the range of 1.times.10.sup.20 -2.times.10.sup.21 atoms/cm.sup.3, and the concentration of fluorine atoms in the film being no more than one half of the concentration of boron atoms. A process for producing an amorphous photo-electric transducer is also disclosed, wherein the p-type amorphous semiconductor film is formed by a pulse discharge-assisted chemical vapor deposition (CVD) technique which decomposes a feed gas including gaseous boron trifluoride (BF.sub.3) as a dopant.

REFERENCES:
patent: 4624862 (1986-11-01), Yang et al.
patent: 5061322 (1991-10-01), Asano

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