Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1995-06-05
1997-01-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257751, 257757, 257764, 257770, H01L 2945, H01L 2973
Patent
active
055962211
ABSTRACT:
An n type collector region is formed at a main surface of a p type silicon substrate. A p type base region is formed at a surface of the collector region. An n type emitter region is formed at a surface of the base region. A polycrystalline silicon layer is formed on a surface of the emitter region. An interlayer insulation layer is formed so as to cover the polycrystalline silicon layer. A contact hole is formed on the emitter region through the interlayer insulation layer and the polycrystalline silicon layer and reaching the surface of the emitter region. A metal electrode is formed within contact hole so as to provide contact with the surface of the emitter region. According to this structure, the emitter resistance can be reduced. Thus, the operation speed of a bipolar transistor can be improved.
REFERENCES:
patent: 4502209 (1985-03-01), Eizenberg et al.
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5194926 (1993-03-01), Hayden
patent: 5345102 (1994-09-01), Matsumoto
patent: 5442226 (1995-08-01), Maeda et al.
patent: 5466971 (1995-11-01), Higuchi
patent: 5475257 (1995-12-01), Hashimoto
Hot Carrier Effects in Advanced Self-Aligned Bipolar Transistors, pp. 22-25, Technical Digest IEDM 85, S. A. Peterson et al.
1.2 .mu.m Direct Ion-Implanted Emitter Bi-CMOS Technology, pp. 130-131, Information and Communication Engineers of Japan ICD 87-33, Hiroshi IWAI et al.
Silicides for VLSI Applications, pp. 130-131, Academic Press 1983, S. P. Murarka.
Jackson Jerome
Mitsubishi Denki & Kabushiki Kaisha
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