High sensitivity silicon avalanche photodiode

Details High sensitivity silicon avalanche photodiode High sensitivity silicon avalanche photodiode

1994-12-06

1997-01-21

Le, Que T.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

257186, H01J 4014

Patent

active

055961860

ABSTRACT:
A silicon avalanche photodiode for ultraviolet light detection having a p.sup.+ -layer, an n-layer, an n.sup.- -layer and an n.sup.+ -silicon substrate in the order from the entrance side of the ultraviolet light, wherein the p.sup.+ -layer has a thickness at least equal to 0.7/.alpha. in which .alpha. is the absorption coefficient of silicon to the ultraviolet light. Also, a divided silicon avalanche photodiode provided with a photosensor array comprising plural light-receiving areas arranged in a matrix and having a guard ring only at the external periphery of the photosensor array.

REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4840916 (1989-06-01), Yasuda et al.
patent: 4949144 (1990-08-01), Kuroda et al.
patent: 5021854 (1991-06-01), Huth

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