Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1996-04-23

1998-01-06

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

1566431, 216 67, H01L 2100

Patent

active

057050198

ABSTRACT:
A plasma processing apparatus comprises a reaction chamber, an upper electrode, a lower electrode which confronts the upper electrode and also functions as a sample stage, means of supplying RF power between the upper electrode and lower electrode such that the RF power is supplied to one of the upper and lower electrodes, with another electrode and the reaction chamber being grounded, and RF impedance matching means, wherein the capacitance between the grounded electrode and the reaction chamber is 125 pF or less. The apparatus is capable of stabilizing the plasma generation and alleviating the occurrence of sudden deterioration of the repeatability of plasma processing and unequal performance of plasma processing among individual apparatus. The apparatus can be applied suitably to etching apparatus having small electrode spacing and using a chlorine compound gas or a bromine compound gas such as Cl.sub.2 or HBr.

REFERENCES:
patent: 5584933 (1996-12-01), Saito

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