Porous silicon dioxide moisture sensor and method for manufactur

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – Frequency of cyclic current or voltage

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357 75, 357 78, 357 49, 357 54, 357 34, 324 61P, H01L 2934, H01L 2316, H01L 2336

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040578232

ABSTRACT:
A method and resulting structure for a relative humidity monitor which can be built into an integrated circuit chip. A small area on a silicon chip is made porous by anodic etching. This region is then oxidized and a metal counter electrode is deposited over part of the porous area. The surface area in the dielectric under the counter electrode is very high and because of the openness of the structure, ambient moisture can quickly diffuse into the dielectric under the electrode and adsorb onto the silicon dioxide surface. Changes in ambient humidity will then be reflected by measurable changes in capacitance or conductance of the device.

REFERENCES:
patent: 3539917 (1970-11-01), Chleck
patent: 3943557 (1976-03-01), Frazee et al.
patent: 3961353 (1976-06-01), Aboaf et al.
IBM Technical Disclosure Bulletin, vol. 16, No. 4, Gettering Technique and Structure by Bogardus, Sept. 1973, pp. 1066-1067.
IBM Technical Disclosure Bulletin, vol. 18, No. 1, Dielectric Isolation of Silicon Devices, by Badami et al, June 1975, pp. 116-117.

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