Semiconductor laser device and a method for producing the same

Details Semiconductor laser device and a method for producing the same Semiconductor laser device and a method for producing the same

1991-09-20

1993-07-13

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 48, 372 49, H01S 319

Patent

active

052280470

ABSTRACT:
A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

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Nannichi et al., Japanese J. Appl. Phys. (1988) 27(12):L2367-2369.
Sasaki et al., Japanese J. Appl. Phys. (1991) 30(5B):L904-L906.
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