Elevated pin diode active pixel sensor including a unique interc

Details Elevated pin diode active pixel sensor including a unique interc Elevated pin diode active pixel sensor including a unique interc

1998-10-19

2000-01-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257444, 257656, H01L 3100, H01L 31075, H01L 31105, H01L 31117

Patent

active

060181877

ABSTRACT:
An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. Each photo sensor includes an individual pixel electrode. An I-layer is formed over all of the pixel electrodes. A transparent electrode is formed over the I-layer. An inner surface of the transparent electrode is electrically connected to the I-layer and the interconnect structure.

REFERENCES:
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patent: 5213984 (1993-05-01), Okada et al.
patent: 5235195 (1993-08-01), Tran et al.
patent: 5315101 (1994-05-01), Hughes et al.
patent: 5481124 (1996-01-01), Kozuka et al.
Q. Zhu, T. Lule, H. Stiebig, T. Martin, J. Giehl, J. Zhou, H. Fisher, M. Bohm--Universitat-GH Siegen, Institut fur Halbleiterelektronik (IHE), D-57068, Siegen, Germany; pp. 727-729.
Silicon Vision GmbH--TFA Technology--a-Si:H Photodetectors, pp. 1-6, GIF image 761.times.413 pixels; Thin Film Technology pp. 1-2, GIF image 901.times.457 pixels; Archive-Index, p. 1.

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