Molecular beam epitaxy process of making superconducting oxide t

Details Molecular beam epitaxy process of making superconducting oxide t Molecular beam epitaxy process of making superconducting oxide t

1992-02-19

1993-07-13

Beck, Shrive

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505730, 427 62, 427564, 427314, 4271263, 4274192, 4274193, B05D 512

Patent

active

052273636

ABSTRACT:
A method makes a superconducting oxide thin film by irradiating an oxygen radical beam with necessary elements of the compound onto a substrate mounted in a molecular beam epitaxy system. The process can selectively form the superconducting oxide thin film on the substrate more efficiently in a direct reaction manner while maintaining the vacuum chamber of the molecular beam epitaxy system at a higher vacuum level.

REFERENCES:
patent: 5135906 (1992-08-01), Harada et al.
patent: 5143896 (1992-09-01), Harada et al.
Nakao et al., "Superconductivity in B.sub.i S.sub.r C.sub.a C.sub.u O superlattices: two-dimensional Properties of CuO planes", Jpn. J. Appl. Phys. 30(12B, Dec. 1991, pp. 3929-3932.
Furukawa et al., "In-Situ Epitaxial Growth of B.sub.i -S.sub.i -C.sub.a -C.sub.u -O films and superlattices by MBE using an oxygen radical beam", Physica C 185-189 (1991) pp. 2083-2084.
Schlom et al., "Molecular Beam Epitaxy of layered D.sub.y -B.sub.a -C.sub.u -O compounds" MRS (Reno, Nev.) Apr. 1988 pp. 197-200.
Eckstein et al., "Epitaxial growth of high-temperature superconducting thin films", J. Vac. Sci. Technol. B7(2), Mar./Apr. 1989 pp. 319-323.
Schlom et al., "Molecular beam epitaxy-a path to novel high-Tc superconductors?", Proc. SPIE-Int. Soc. Opt. Eng., 1287 (High Tc Supercond. Thin Films Appl.), 1990 pp. 152-165.
"Advances in Superconductivity III"; Furukawa et al.; Proceedings of the 3rd International Symposium on Superconductivity (ISS '90), Nov. 6-9, 1990 pp. 1-4.
"Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source", Spah et al.; Amer. Inst. of Physics, Aug. 1988, pp. 441-443.
"In situ epitaxial growth of Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x films by molecular beam epitoxy with an activated oxygen source"; Kwo et al; Amer. Inst. of Physics, Dec. 1988 pp. 2683-2685.

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