Interconnection forming method

Details Interconnection forming method Interconnection forming method

1992-02-07

1993-07-13

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 156345, 156643, 156646, 156656, H01L 21283

Patent

active

052273377

ABSTRACT:
There is proposed a method of carrying out etch-back of a tungsten layer (Blk-W layer) formed by the blanket CVD process while suppressing the loading effect by using a small system. The etch-back process is divided into a high temperature process for removing about 90% of the film thickness of the Blk-W layer, and a low temperature process for removing the remainder. Switching between wafer temperatures at the both processes is carried out by upper and lower movement of pins included in a wafer mount electrode. If the wafer is held on the wafer mount electrode in a manner to be in contact therewith, cooling can be carried out. Further, if the wafer is held on the wafer mount electrode in the state spaced therefrom, heating by plasma radiation heat can be carried out. In the high temperature process, S.sub.2 F.sub.2 gas is used to carry out high speed etching by F*. On the other hand, in the low temperature process, S.sub.2 F.sub.2 /H.sub.2 mixed gas is used to deposit S dissociated and formed from S.sub.2 F.sub.2 on the surface of the Blk-W layer. Here, H.sub.2 has the effect to form H* to capture excessive F*, thus to promote deposition of S dissociated and formed from S.sub.2 F.sub.2. As the result of the fact that sputter removal of S and etching reaction are competitive, the etchrate of the Blk-W layer is lowered.

REFERENCES:
patent: 4936950 (1990-06-01), Doan et al.
patent: 4948462 (1990-08-01), Rossen
patent: 4981550 (1991-01-01), Huttemann et al.
patent: 5035768 (1991-07-01), Mu et al.
patent: 5164330 (1992-11-01), Davis et al.

Affiliated with

Also associated with

Rating

Interconnection forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnection forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnection forming method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2311822