LPCVD process for depositing titanium nitride (tin) films and si

Details LPCVD process for depositing titanium nitride (tin) films and si LPCVD process for depositing titanium nitride (tin) films and si

1991-10-31

1993-07-13

Maples, John S.

Fishing, trapping, and vermin destroying

437192, 437195, 437247, H01L 21441, H01L 21324

Patent

active

052273342

ABSTRACT:
A process for depositing titanium nitride films on silicon substrates or the like which includes reacting nitrogen trifluoride, NF.sub.3, with a titanium containing reactant gas, such as a titanium containing metal organic precursor, in a low pressure chemical vapor deposition reaction chamber. This CVD chamber is preferably a single wafer chamber operated at a pressure between 0.1 and 10.0 Torr and at a elevated temperature on the order of about 500.degree. C. This process is most useful, for example, in the formation of low resistivity, highly conformal coatings of TiN on the surfaces of vias etched vertically in silicon integrated circuits and adapted to receive a selected heavy metal such as tungsten in direct contact therewith.

REFERENCES:
patent: 4897709 (1990-01-01), Yokoyama et al.

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