Local interconnection having a germanium layer

Details Local interconnection having a germanium layer Local interconnection having a germanium layer

1992-02-27

1993-07-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437177, 437192, 257382, 257384, 148DIG58, H01L 2120, H01L 2144

Patent

active

052273334

ABSTRACT:
A process for making local interconnection of devices on a semiconductor substrate is disclosed. Contact openings are defined to a plurality of devices on the substrate. A blanket layer of germanium is deposited over the substrate, followed by deposition of a blanket layer of electrically conducting material on top of the germanium layer. The conducting layer is etched first stopping at the germanium layer. Subsequently the germanium layer is etched by a different process, selective to the conductive layer and the device contact. The conducting layer is preferably one of the following materials: polysilicon, silicide, a composite of polysilicon with metal or silicide films.

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