Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

1994-10-18

1996-04-23

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257490, 257491, 257494, H01L 2974, H01L 2358

Patent

active

055106340

ABSTRACT:
An IGBT chip includes a unit cell region and a guard ring region which surrounds the unit cell region. In the unit cell region, a plurality of IGBT unit cells are formed, each of which comprises a base layer, a source layer, a common gate electrode, a common source electrode, and a common drain electrode. In the guard ring region, at least one diffused layer making up a guard ring is formed. Further, an annular diffused layer is formed and is connected to the drain electrode. The annular diffused layer is disposed away from the outermost guard ring by a specified length. This length is such that the punch-through occurs before the avalanche breakdown voltage of the junction associated with the outermost guard ring. Therefore, the withstand voltage against the avalanche breakdown when surge voltage is applied to the drain electrode is improved.

REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4400716 (1983-08-01), Tani et al.
patent: 4443931 (1984-04-01), Baliga et al.
patent: 4707719 (1987-11-01), Whight
patent: 5014101 (1991-05-01), Finney
patent: 5223919 (1993-06-01), Whight et al.

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