Method of making an SOI transistor

Details Method of making an SOI transistor Method of making an SOI transistor

1997-01-23

1998-07-28

Dutton, Brian

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

438556, H01L 21331, H01L 2122, H01L 2138

Patent

active

057862583

ABSTRACT:
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

REFERENCES:
patent: 5019525 (1991-05-01), Virkus et al.
patent: 5298786 (1994-03-01), Shahidi et al.
patent: 5376823 (1994-12-01), Kojima et al.
patent: 5424575 (1995-06-01), Washio et al.
patent: 5580797 (1996-12-01), Miwa et al.
patent: 5629217 (1997-05-01), Miwa et al.

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