Patent
1982-09-23
1986-03-18
James, Andrew J.
357 13, 357 41, 357 55, 357 238, H01L 2978
Patent
active
045772088
ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Integral avalanche protection is provided by a pair of isolation regions forming protective barrier junctions with a common layer, which junctions are in parallel with the reverse blocking junctions of the power FET in the OFF state and have a lower reverse breakover threshold for protecting the latter. A plurality of integrated FETs each have left and right source regions and left and right channel regions with a common drift region therebetween, and conduct current in either direction according to the polarity of main terminals.
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IEEE Transactions on Electron Devices, vol. ED 25, #10, "Non Planar Power FETs", by Salama et al., Oct. 1978.
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Benjamin James A.
Lade Robert W.
Schutten Herman P.
Eaton Corporation
James Andrew J.
Prenty Mark
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