Method of making surface-normal semiconductor optical cavity dev

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437108, H01L 2120

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active

055102913

ABSTRACT:
A multi-layer mirror structure included in a surface-normal semiconductor optical cavity is fabricated in a deposition reactor dedicated to that purpose alone. Additional layers of the device are subsequently deposited on top of the mirror structure in a second reactor. In practice, the dedicated reactor produces layers whose thickness variations over their entire extents are considerably less than the thickness variations of layers made in the second reactor. This coupled with the fact that the actual achieved thickness of the mirror structure can be conveniently measured before commencing deposition of a prescribed thickness of the additional layers makes it possible to fabricate a specified-thickness optical cavity within tight tolerances in a high-yield manner.

REFERENCES:
R. H. Yan et al, "Electroabsorptive Fabry-Perot Reflection Modulators with Asymmetric Mirrors", Sep. 1989, pp. 273-275, IEEE Photonics Technology Letters, vol. 1, No. 9.
J. L. Jewell et al, "Low-Threshold Electrically Pumped Vertical-Cavity Surface-Emitting Microlasers", Aug. 17, 1989, pp. 1123-1124, Electronics Letters, vol. 25, No. 17.

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