Method of making a semiconductor device with a composite drift r

Details Method of making a semiconductor device with a composite drift r Method of making a semiconductor device with a composite drift r

1993-11-29

1996-04-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437100, 437130, 437132, 257492, 257192, 257200, H01L 21265

Patent

active

055102751

ABSTRACT:
A power semiconductor device having a source region (24) and a drain region (26) disposed in a semiconductor substrate (10). A composite drift region is formed of an n-type first drift region (12) in the substrate (10) and of a second drift region (36) composed of a second type of semiconductor material such as gallium arsenide or silican carbide which is a different material than that of the substrate.

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