Semiconductor laser

Details Semiconductor laser Semiconductor laser

1977-02-25

1978-06-27

Miller, Jr., Stanley D.

Oscillators

Molecular or particle resonant type

357 18, 357 56, H01S 319

Patent

active

040978192

ABSTRACT:
A semiconductor laser has a semiconductor base having (100) orientation. A semiconductor mesa of a III-V material is grown on the base by liquid phase epitaxy. The semiconductor mesa has crystallographic facets perpendicular to the base and parallel to one another. The crystallographic facets from the reflecting mirrors of a lasing cavity.

REFERENCES:
patent: 3883219 (1975-05-01), Logan et al.
patent: 3902133 (1975-08-01), Watts
patent: 4007978 (1977-02-01), Holton
I. Hayashi et al., "GaAs-Al.sub.x Ga.sub.1-x As Double Heterostructure Injection Lasers" Journal of Applied Physics, vol. 12, No. 5, Apr. 1971, pp. 1929-1941.

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