Method of cleaning semiconductor substrate using an aqueous acid

Details Method of cleaning semiconductor substrate using an aqueous acid Method of cleaning semiconductor substrate using an aqueous acid

1994-09-19

1996-04-23

Silbaugh, Jan H.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 2, 134 41, C23G 102, C23G 114

Patent

active

055099700

ABSTRACT:
Cleaning methods for semiconductor substrates which can remove metallic impurities and natural oxide films from the surface of the substrate. As a cleaning solution, aqueous acid solution containing 0.0001-0.001 weight % of ammonia based on a conversion off the amount off ammonium hydroxide or 0.0005-0.01 weight % of EDTA is used. The cleaning solution preferably contains 1-10 weight % of hydrogen fluoride. Metallic impurities removed from the surface of the substrate into the cleaning solution form complexes or chelates with ammonia molecules or EDTA molecules, thereby masking the metallic impurities.

REFERENCES:
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patent: 5129955 (1992-07-01), Tanaka
patent: 5221423 (1993-06-01), Sugino
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5308400 (1994-05-01), Chen
T. Shimono et al., IEICE Trans. Electron. vol. E75-C No. 7, pp. 812-815.

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