Laser diode for producing an optical beam at a visible wavelengt

Coherent light generators – Particular active media – Semiconductor

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H01S 319

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active

052415538

ABSTRACT:
A laser diode comprises a substrate of gallium arsenide, doped to a first conductivity type and extending in a longitudinal direction, a first clad layer provided on the substrate and doped to the first conductivity type, an active layer of a mixed crystal having a second band gap that is smaller than a band gap of the first clad layer and containing elements of boron, gallium, indium and a group V element, the active layer being provided on the first clad layer and extending in the longitudinal direction for producing a coherent optical beam in the longitudinal direction as a result of the stimulated emission with a visible wavelength, a second clad layer having a band gap larger than the band gap of the active layer and provided on the active layer with a second conductivity type opposite to the first conductivity type, a first electrode provided on the second clad layer for injecting carriers of a first type therein, a second electrode provided on a lower major surface of the substrate for injecting carriers of a second, opposite type therein; and reflection structures provided for establishing an optical resonance in the active layer.

REFERENCES:
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5177757 (1993-01-01), Tsugami

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