Semiconductor switch

Details Semiconductor switch Semiconductor switch

1975-07-15

1977-08-02

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252J, 307252N, 307305, H03K 1772

Patent

active

040398650

ABSTRACT:
A semiconductor switch comprising a PNPN switch having an equivalently four-layer structure of p, n, p and n regions and three PN junctions; a transistor; two impedance elements and a capacitive element, wherein the transistor and one of the impedance elements is connected in parallel to each other, the parallel circuit thus formed being connected between the p base and the cathode of the PNPN switch, the capacitive element is connected between the base of the transistor and the anode of the PNPN switch, and the other impedance element is connected between the base and the emitter of the transistor, so that the obtained semiconductor switch has a high dv/dt withstandingness independent of the potential at the anode or cathode and a high breakdown voltage, can be closed with a small control current and is adapted for high speed switching.

REFERENCES:
patent: 3723769 (1973-03-01), Collins

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