Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1976-05-27
1977-08-02
Zazworsky, John
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307252UA, 323 22SC, 307252G, H03K 1772
Patent
active
040398641
ABSTRACT:
A semiconductor bidirectional switch circuit comprises a bidirectional switch including two thyristors connected in antiparallel relationship. A bypass circuit is connected to each of the two thyristors for bypassing a part of a main current flowing through the thyristor from the anode to the cathode of the thyristor. A cathode-gate driver circuit is connected to the cathode-gate of each of the two thyristors for supplying a current thereto and a driver circuit is connected to the base of the transistor constituting each of the two bypass circuits, for extracting a current from the base, whereby the gate current of either of the thyristors is allowed to continue flowing at a low drive voltage irrespective of the amplitude of an AC signal voltage which passes through the bidirectional switch circuit so that even when the AC signal current decreases in absolute value below the self-holding current of the thyristor associated, the AC signal may be passed through the thyristor switch without being subjected to instantaneous interruptions.
REFERENCES:
patent: 3237030 (1966-02-01), Coburn
patent: 3283177 (1966-11-01), Cooper
Ohhinata Ichiro
Okuhara Shinzi
Tokunaga Michio
Hitachi , Ltd.
Zazworsky John
LandOfFree
Semiconductor bidirectional switch circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor bidirectional switch circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor bidirectional switch circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2301514