Method of fabricating SOI wafer with SiGe as an etchback film in

Details Method of fabricating SOI wafer with SiGe as an etchback film in Method of fabricating SOI wafer with SiGe as an etchback film in

1992-06-01

1993-08-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

257 63, 257 65, 257347, 437 21, 437 62, 437 86, 437974, H01L 2120

Patent

active

052408760

ABSTRACT:
An SOI wafer is formed having a silicon-germanium layer between the epitaxial layer of the device and the insulative layer. The process includes bonding a second substrate to a silicon-germanium layer on a first substrate by an intermediate insulative layer. The first substrate is removed down to the silicon-germanium layer and the silicon layer is epitaxially formed on the silicon-germanium layer.

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