Method of manufacturing a flattened semiconductor device

Details Method of manufacturing a flattened semiconductor device Method of manufacturing a flattened semiconductor device

1976-10-12

1977-08-02

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148187, 427 85, 357 49, H01L 21225

Patent

active

040393593

ABSTRACT:
A method of manufacturing a semiconductor device whose surface is flattened, comprises the steps of forming a first semiconductor oxide film at selected areas of a surface of a semiconductor substrate by local oxidation, applying a solution of a semiconductor compound onto the surface of the resultant substrate, the solution being adapted to form a second semiconductor oxide film whose etching rate is substantially equal to that of the underlying first semiconductor oxide film, vaporizing a solvent of the solution so as to form the second semiconductor oxide film on the substrate surface, and etching parts of the first and second semiconductor oxide films.

REFERENCES:
patent: RE28653 (1975-12-01), Murphy
patent: 3660156 (1972-05-01), Schmidt
patent: 3832246 (1974-08-01), Lynch
patent: 3900350 (1975-08-01), Appels et al.
patent: 3958040 (1976-05-01), Webb
patent: 3961999 (1976-06-01), Antipov
patent: 4001465 (1977-01-01), Graul et al.
patent: 4002511 (1977-01-01), Magdo et al.

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