Optically-sensitive semiconductor devices

Details Optically-sensitive semiconductor devices Optically-sensitive semiconductor devices

1984-11-16

1986-12-02

Davie, James W.

357 16, 357 15, 357 52, 357 53, H01L 2714, H01L 3100

Patent

active

046268847

ABSTRACT:
A semiconductor device, having an optically-sensitive barrier region which is substantially fully depleted at zero bias and in the absence of light, is switchable between a high voltage blocking state and a high current state by means of incident light. The barrier region contains a net impurity concentration of opposite conductivity type to that of first and second regions between which it is located and is divided laterally into plural areas located between deeper closely-spaced field-relief regions. In the absence of incident light and with reverse bias of the barrier region the device has a high voltage blocking characteristic due to depletion layers from neighboring field-relief regions merging together to reduce the electrostatic field below the barrier region.

REFERENCES:
patent: 4149174 (1979-04-01), Shannon

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