Lateral double-diffused MOS transistor devices suitable for sour

Details Lateral double-diffused MOS transistor devices suitable for sour Lateral double-diffused MOS transistor devices suitable for sour

1985-08-15

1986-12-02

Edlow, Martin H.

357 238, 357 2314, 357 13, H01L 2994

Patent

active

046268790

ABSTRACT:
A lateral double-diffused MOS transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. This intermediate semiconductor layer substantially improves the punchthrough and avalanche breakdown characteristics of the device, thus permitting operation in the source-follower mode, while also providing a compact structure which features a relatively low normalized "on" resistance.

REFERENCES:
patent: 4292642 (1981-09-01), Appels et al.
patent: 4300150 (1981-11-01), Colak
patent: 4422089 (1983-12-01), Vaes et al.
Pocha et al, "Tradeoff Between Threshold Voltage and Breakdown in High Voltage Double-Diffused MOS Transistors", IEEE Trans. on Elec. Dev., vol. ED25, No. 11, Nov. 1978.
Colak et al., "Lateral DMOS Power Transistor Design", IEEE Electron Device Letters, vol. EDL-1, No. 4, Apr. 80.

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