Structure of capacitor and method of frabricating same

Details Structure of capacitor and method of frabricating same Structure of capacitor and method of frabricating same

1996-11-01

1998-03-24

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613214, 3613215, 257301, 437 60, 437919, 29 2542, H01G 406, H01G 700

Patent

active

057319499

ABSTRACT:
A capacitor includes a substrate having a first trench, and a second trench, a first storage node having a first body and a first flange, the first body being on the first trench and having a first height and the first flange being extended at a top portion of the first body to a first length from the first body, a second storage node having a second body and a second flange, the second body being in the second trench and having a second height different from the first height of the first body, and the second flange being extended in a direction opposite to the first flange to a second length from the second length from the second body, a dielectric film on the surfaces of the first and second storage nodes, and a plate electrode on the dielectric film.

REFERENCES:
patent: 5442584 (1995-08-01), Jeong et al.
patent: 5461248 (1995-10-01), Jun
"A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMS", Watanabe, H. et al., IEDM 92, pp. 259-262, 1992.

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