Method for providing isolation between semiconductor devices usi

Details Method for providing isolation between semiconductor devices usi Method for providing isolation between semiconductor devices usi

1995-12-28

1998-07-28

Chaudhuri, Chandra

Fishing, trapping, and vermin destroying

437 90, 148DIG50, H01L 21761

Patent

active

057862290

ABSTRACT:
A method for isolation between semiconductor devices includes the steps of: forming sequentially a first oxide film and silicon nitride layer on a silicon substrate; forming a first photoresist pattern on the nitride layer where field oxide is not to be formed; etching the exposed nitride to predetermined depth; stripping the first photoresist film; oxidizing the resultant wafer of the above step until a second oxide grows on the etched silicon substrate and extends itself from the region of the patterned nitride and first oxide layer to a predetermined outward distance; forming a second photoresist film at the portions excepting the surface of the nitride layer; etching the nitride layer, the first oxide layer and a portion of second oxide positioned at the vertical downward direction under the first oxide; stripping the second photoresist film, growing epitaxially the exposed portion of the etched silicon substrate; depositing an insulating layer on the resultant structure of the above step and polishing the deposited insulating layer until the epitaxial layer is exposed.

REFERENCES:
patent: 4758531 (1988-07-01), Beyer et al.
patent: 4948456 (1990-08-01), Schubert
patent: 5087586 (1992-02-01), Chan et al.
patent: 5108946 (1992-04-01), Zdebel et al.
patent: 5135884 (1992-08-01), Miller

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