Method of forming a via having sloped sidewalls

Details Method of forming a via having sloped sidewalls Method of forming a via having sloped sidewalls

1992-01-10

1992-11-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437228, 437235, 437978, 437982, 156625, H01L 2144

Patent

active

051622610

ABSTRACT:
A sputter-etch process is used to etch vias having substantially vertical sidewalls, such that a sloped sidewall is formed. Using a silicon dioxide layer in which to form the vias, slopes of approximately 45.degree. may be obtained. A second insulator layer may be provided to protect the leads and other portions of the device during the sputter-etch to prevent damage.

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