Method for interconnecting a filament channel transistor with a

Details Method for interconnecting a filament channel transistor with a Method for interconnecting a filament channel transistor with a

1990-11-26

1992-11-10

Thomas, Tom

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 48, 437 60, 437203, 437919, H01L 2170

Patent

active

051622505

ABSTRACT:
A method and apparatus is provided for allowing access to a buried wordline conductor (38) of a dynamic random access memory cell array. A selected memory cell is used as a wordline connection cell (47). A local oxide layer (43) is used during the etchant process which is used to form wordline conductors (38). The oxide layer (43) functions as a mask to create a wordline connection body (45). During the formation of the bitline conductors (42), a wordline contact 49 may be similarly formed to provide access to the worline conductors (38). The wordline connection cell (47) provides efficient access to the wordline conductors (38) and uses only the substrate surface area occupied by a single memory cell.

REFERENCES:
patent: 4350536 (1982-09-01), Nakano et al.
patent: 4683643 (1987-08-01), Nakajima et al.

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