Process for trench-isolated self-aligned split-gate EEPROM trans

Details Process for trench-isolated self-aligned split-gate EEPROM trans Process for trench-isolated self-aligned split-gate EEPROM trans

1990-11-14

1992-11-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, H01L 21265, H01L 21465

Patent

active

051622475

ABSTRACT:
A process for the fabrication of an EEPROM structure requiring only two poly layers that utilize hot electrons from the substrate for programming and poly-to-poly electron tunneling for erasure. The structure is advantageously utilized in an Ultra Violate Light Erasable PROM.
The process results in a structure that allows programming and erasure by electron tunneling only.

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