Process for producing semiconductor devices

Details Process for producing semiconductor devices Process for producing semiconductor devices

1985-06-24

1986-12-02

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

29571, 148 15, 148187, H01L 21324

Patent

active

046264507

ABSTRACT:
A process for producing semiconductor devices having excellent electric characteristics such as high threshold voltage Vth and small leakage current, maintaining high yields while preventing the occurrence of thermal etching at the time of heat-treatment to form a well diffusion layer in semiconductor devices such as CMOS IC's. Namely, a semiconductor wafer having a silicon dioxide film formed on the main surface thereof is heat-treated at a high temperature in an inert gas atmosphere. In this case, oxygen is contained in small amounts in the inert gas, so that pinholes formed in the silicon dioxide film are buried therein by the action of oxygen gas. Therefore, thermal etching is not generated by the high temperature inert gas, and the yields of semiconductor devices can be increased.

REFERENCES:
patent: 4214919 (1980-07-01), Young
patent: 4377605 (1983-03-01), Yamamoto
patent: 4554726 (1985-11-01), Hillenius
Irene, "Method to Reduce Defects in Thw SiO.sub.2 Films", IBM TDB, vol. 21, No. 1, Jun. 1978, pp. 393-394.

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