Method for annealing compound semiconductor devices

Details Method for annealing compound semiconductor devices Method for annealing compound semiconductor devices

1991-11-13

1992-11-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437160, 437164, 437247, 437919, 437913, H01L 21265, H01L 2124

Patent

active

051622424

ABSTRACT:
A method of fabricating a compound semiconductor device is disclosed. The method includes forming a compound semiconductor substrate, depositing an insulator film on that substrate, then depositing a second film containing a refractory metal on the insulator film. The method further includes annealing the substrate-insulator film-refractory metal containing film composite in an inert gas atmosphere excluding a toxic substance.

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