Semiconductor device

Details Semiconductor device Semiconductor device

1996-07-25

1998-03-24

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to absorb or localize unwanted impurities or...

257611, 257617, 438479, H01L 2358

Patent

active

057316376

ABSTRACT:
The object of the present invention is to provide a method of manufacturing high-performance, high-breakdown-voltage semiconductor devices which suppresses an increase in the junction leakage current due to heavy metal contamination without increasing the number of manufacturing steps. A method of manufacturing semiconductor devices according to the invention, comprises the steps of ion-implanting one or more elements selected from a group of silicon, carbon, nitrogen, oxygen, hydrogen, argon, helium, and xenon into at least one surface of a semiconductor substrate of a first conductivity type at a dose of 1.times.10.sup.15 cm.sup.-2 or more to form a distortion layer, oxidizing the surface of the substrate to form an oxide film, ion-implanting impurities of a second conductivity type at a low concentration (a dose of less than 1.times.10.sup.15 cm.sup.-2) via the oxide film into the one surface of the substrate, ion-implanting impurities of the second conductivity type at a high concentration (a dose of 1.times.10.sup.15 cm.sup.-2 or more) via the oxide film into the other surface of the substrate, and forming a junction by heat treatment.

REFERENCES:
patent: 4216030 (1980-08-01), Graul et al.
patent: 4291329 (1981-09-01), Hanes et al.

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