Semiconductor device having a metal film formed in a groove in a

Details Semiconductor device having a metal film formed in a groove in a Semiconductor device having a metal film formed in a groove in a

1996-06-06

1998-03-24

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257761, 257762, 257763, H01L 2348, H01L 2352, H01L 2940

Patent

active

057316341

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80.degree. to 500.degree. C.

REFERENCES:
patent: 4977440 (1990-12-01), Stevens
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5569961 (1996-10-01), Lee
patent: 5585673 (1996-12-01), Joshi et al.

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