Light beam applied to a layered semiconductor structure is contr

Details Light beam applied to a layered semiconductor structure is contr Light beam applied to a layered semiconductor structure is contr

1985-05-23

1986-12-02

Punter, William H.

350 9614, 350386, 350393, G02F 1015, G02F 119, G02F 135

Patent

active

046260757

ABSTRACT:
A nonlinear optical device includes a layered semiconductor structure having layers of different energy band gap materials. Alternate layers of the structure are arranged for containing trapped charge. An input light beam is applied to the layers. A control light beam varies the trapped charge for controlling propagation of the input light beam through the structure.

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