Bipolar cross-coupled memory cells having improved immunity to s

Details Bipolar cross-coupled memory cells having improved immunity to s Bipolar cross-coupled memory cells having improved immunity to s

1990-07-17

1992-03-10

James, Andrew J.

357 15, 357 34, 357 36, 357 45, 357 51, H01L 2972, H01L 2702, H01L 2948

Patent

active

050953559

ABSTRACT:
A bipolar RAM comprising a plurality of memory cells formed of cross-coupled bipolar transistors and a peripheral bipolar circuit formed of bipolar transistor, provided with an epitaxial layer which is to be the collector region of the bipolar transistor in the memory cell portion which is thinner and has higher impurity density than the epitaxial layer which is to be the collector region of a bipolar transistor in the peripheral circuit.

REFERENCES:
patent: 3969748 (1976-07-01), Horie et al.
patent: 4047217 (1977-09-01), McCaffrey et al.
patent: 4278987 (1981-07-01), Imaizumi et al.
patent: 4566174 (1986-01-01), Yasuda et al.
IEEE Transactions of Nuclear Science, J. A. Zoutendyk, "Modeling of Single-Event Upset in Bipolar Integrated Circuits", Bol NS-30, No. 6, Dec. 1983, pp. 4540-4545.

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