Method of manufacturing a semiconductor light-emitting device

Details Method of manufacturing a semiconductor light-emitting device Method of manufacturing a semiconductor light-emitting device

1997-06-10

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438931, 117952, H01L 2120

Patent

active

059239506

ABSTRACT:
A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.

REFERENCES:
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5661074 (1997-08-01), Tischler
A. Kuramata et al., "MOVPE Growth of GaN on Various Cleavable Substrates", International Symposium on Blue Laser and Light Emitting Diodes, pp. 80-85, Mar. 5-7, 1996.
F. A. Ponce et al., "Microstructure of GaN epitaxy on SiC using AIN buffer layers", Appl. Phys. Lett., vol. 67, No. 3, pp. 410-412, Jul. 17, 1995.

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