Recovery of surface-ready silicon carbide substrates

Details Recovery of surface-ready silicon carbide substrates Recovery of surface-ready silicon carbide substrates

1997-04-17

1999-07-13

Wilczewski, Mary

Semiconductor device manufacturing: process

Repair or restoration

438931, H01L 2100

Patent

active

059239468

ABSTRACT:
A method is disclosed for recovering surface-ready silicon carbide substrates from heteroepitaxial structures of Group III nitrides on silicon carbide substrates. The method comprises subjecting a Group III nitride epitaxial layer on a silicon carbide substrate to a stress that sufficiently increases the number of dislocations in the epitaxial layer to make the epitaxial layer subject to attack and dissolution in a mineral acid, but that otherwise does not affect the silicon carbide substrate, and thereafter contacting the epitaxial layer with a mineral acid to remove the Group III nitride while leaving the silicon carbide substrate unaffected.

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