Self aligned notch for InP planar transferred electron oscillato

Details Self aligned notch for InP planar transferred electron oscillato Self aligned notch for InP planar transferred electron oscillato

Filed on

1986-01-13

Date issued

1986-12-02

Examiner

Terapane, John F.

Patent Class

Metal working

SubClass

Method of mechanical manufacture

SubSubClass

Assembling or joining

Other Related Categories

29578, 29590, 1566591, 427 91, 427250, H01L 2100, H01L 21308, H01L 21467, H01L 2194

Type

Patent

Status

active

Patent number

H00001708

Description

ABSTRACT:
A method of fabricating a notched indium phosphide planar transferred electron oscillator device which automatically aligns the high-resistivity notch position immediately adjacent to the cathode contact by slant evaporation of a metal coating over the edge of a masking layer followed by ion implantation.

REFERENCES:
"Notched InP Planar Transferred Electron Oscillators," S. C. Binari et al., International Electron Devices Meeting, Dec. 1982.
"Self-Aligned Notched Planar InP Transferred-Electron Oscillators," S. C. Binari et al., IEEE Electron Device Letters, EDL-6, No. 1, Jan. 1985.

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