Red semiconductor laser of low beam divergence

Details Red semiconductor laser of low beam divergence Red semiconductor laser of low beam divergence

1998-01-22

1999-07-13

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

385131, H01S 319, G02B 610

Patent

active

059236892

ABSTRACT:
This invention is a new type of GaInP/AlGaInP for a visible separate-confinement-heterostructure strained quantum well(SCH-S-QW) laser with passive wave guides in the cladding layers. By using this structure, we can significantly improve the transverse beam divergence with only a slight increase of the threshold current. With proper choice of parameters, the transverse beam divergence as narrow as 18.degree.. FWHM can be achieved while the threshold current only becomes 1.12 factor than the lasers without the passive waveguide structure. This type of structure has three advantages:

REFERENCES:
patent: 5165105 (1992-11-01), Haase et al.
patent: 5282218 (1994-01-01), Okajima et al.
patent: 5331655 (1994-07-01), Harder et al.

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