Metal treatment – Compositions – Heat treating
Patent
1976-07-02
1978-01-17
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
357 88, 357 91, H01L 21265, H01L 2932
Patent
active
040690687
ABSTRACT:
A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.
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Bogardus et al., "Gettering Technique & Structure", Ibid., vol. 16, No. 4, Sept. 1973, pp. 1066-1067.
Nagasaki et al., "Gettering Technique and Structure", Ibid., vol. 17, No. 12, May 1975, pp. 3587-3588.
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Beyer Klaus D.
Das Gobinda
Poponiak Michael R.
Yeh Tsu-Hsing
Brown Edward W.
International Business Machines - Corporation
Rutledge L. Dewayne
Saba W. G.
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