Process for the production of a semiconductor component with at

Details Process for the production of a semiconductor component with at Process for the production of a semiconductor component with at

1978-12-13

1980-08-05

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 13, 357 20, 357 91, H01L 21265, H01L 2126

Patent

active

042160308

ABSTRACT:
A semiconductor component is described which includes two zones of opposite conductivity type having a pn junction therebetween, and in which one zone is formed of a monocrystalline semiconductor substrate body and the other zone is produced in the semiconductor body by a doping process, such, for example, as by an implantation or diffusing process. Before the diffusion or implantation takes place, a zone is created at or near the substrate surface which has a disturbed crystal lattice. The diffusion or implantation then takes place through the disturbed zone. A process for producing such a semiconductor component is also described.
The other zone may also be produced after the disturbed crystal lattice is produced in the portion of the substrate body which portion will later become the second zone.

REFERENCES:
patent: 3900345 (1975-08-01), Lesk
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patent: 4056408 (1977-11-01), Bartko et al.
patent: 4063967 (1977-12-01), Graul et al.
patent: 4081292 (1978-03-01), Aoki et al.
Payne et al., "Fully Ion-Implanted - Transistors" IEEE-Trans. Electron Devices, Ed-21, (1974) 273.
Hofker et al., ". . . B Implantations in Amorphous . . . Si", Rad. Effects, 24 (1975) 223.
Csepregi et al., ". . . Residual Disorder in . . . Si", Rad. Effects, 28 (1976) 227.
Crowder et al., ". . . B Atn . . . in Ion-Implanted Si", Ion Implantation in S/C . . . Ed. Crowder, Plenum, N.Y., 1972, p. 257.
Ryssel et al., "B Doping . . . Amorphous . . . Si . . . Ion-Implantation in S/C . . . " Ed. Crowder, Plenum, N.Y., 1972, p. 215.
Stephen et al., ". . . Ion-Implanted . . . PN Junctions" Rad. Effects, 1 (1971) 73.
Bhatia et al., "Isolation Process . . . " IBM-TDB, 19 (1977) 4171.
Bauer, ". . . B-Implanted Layers in Si . . . "Appl. Phys. Letters, 20 (1972) 107.

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