Darlington transistor

Details Darlington transistor Darlington transistor

1977-02-03

1979-01-23

Miller, Jr., Stanley D.

357 51, H01L 2702

Patent

active

041363558

ABSTRACT:
In a device of Darlington connection of transistors formed on one monolithic substrate, wherein the substrate has a collector region of a first conductivity and a base region of a second conductivity, the collector region and the base region forming a P-N junction inbetween, the base region has at least two emitter regions which are simultaneously formed therein with a specified space inbetween and have the conductivity type same with each other and opposite to that of said base region, the improvement is that the device comprising in said space another region having the same conductivity with that of said emitter regions and the depth larger than those of said emitter regions, thereby defining a narrow path between the collector-base P-N junction and a P-N junction formed between said another region and the base region. The narrow path functions are a bias resistor R1 of sufficiently high resistance connected between the bases of both tansistors, so as to give the device a satisfactory characteristic for the Darlington circuit.

REFERENCES:
patent: 3510735 (1970-05-01), Potter
patent: 3693057 (1972-09-01), Wiedmann
patent: 3836997 (1974-09-01), Einthouen et al.
patent: 3913213 (1975-10-01), Mills et al.

Affiliated with

Also associated with

Rating

Darlington transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Darlington transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Darlington transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2275312