Semiconductor controlled rectifier

Details Semiconductor controlled rectifier Semiconductor controlled rectifier

1974-10-15

1977-04-05

Lynch, Michael J.

357 20, 357 86, H01L 2974

Patent

active

040165914

ABSTRACT:
A semiconductor controlled rectifier comprising a semiconductor substrate having four layers of PNPN types, a pair of main electrodes respectively in ohmic contact with the opposite outer layers, a gate electrode provided to the intermediate P-type layer, a N-type auxiliary region formed in the P-type intermediate layer at such a location that the gate electrode is positioned between the outer N-type layer and the auxiliary region, an auxiliary electrode in contact with the auxiliary region and the P-type intermediate layer, and means for short-circuiting a part of a PN junction formed between the N-type outer layer and the P-type intermediate layer.

REFERENCES:
patent: 3372318 (1968-03-01), Tefft
patent: 3476989 (1969-11-01), Miles et al.
patent: 3586927 (1971-06-01), Roach et al.
patent: 3731162 (1973-05-01), Suenaga et al.
patent: 3879744 (1975-04-01), Dumas

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