Raised source and drain IGFET device and method

Details Raised source and drain IGFET device and method Raised source and drain IGFET device and method

1974-12-03

1977-04-05

Wojciechowicz, Edward J.

357 55, 357 59, H01L 2978, H01L 2906, H01L 2904

Patent

active

040165876

ABSTRACT:
Disclosed is an integrated circuit field effect transistor having a source and drain which protrude above the silicon substrate so as to create shallow junctions with the substrate while maintaining a relatively low sheet resistivity in the region. Two self-aligned source and drain fabrication processes are disclosed for the device. The first process yields a polysilicon field shield and the second process yields a field region composed of thermal silicon dioxide.

REFERENCES:
patent: 3652905 (1972-03-01), Page
patent: 3652907 (1972-03-01), Page et al.
patent: 3711753 (1973-01-01), Brand et al.
patent: 3747203 (1973-07-01), Shannon
patent: 3750268 (1973-08-01), Wang
patent: 3764413 (1973-10-01), Kakizaki et al.
Iwamatsu et al. - International Elec. Device Conf. Wash. D.C. - 12-19-73, pp. 244.

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