Method for manufacturing a silicon layer having increased surfac

Details Method for manufacturing a silicon layer having increased surfac Method for manufacturing a silicon layer having increased surfac

1991-10-23

1993-08-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437198, 437199, 437247, 437919, 437 50, 148DIG14, H01L 21469

Patent

active

052328767

ABSTRACT:
The invention relates to a process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface and which comprises depositing an alloy layer comprising an A-material 2X and a B-material 2Y on a first insulating layer 1 which is deposited on a substrate. The depositing of the alloy layer takes place at a predetermined temperature to form a plurality of B-material 2Y precipitations on the insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces not covered by the plurality of B-material 2Y precipitations. The resulting structure is then cooled, preferably to room temperature. The solubility of the B-material 2Y, which may be considered as the solute, is extremely limited in the A-material 2X, which may be considered as the solvent. The A-material 2X is selectively removed from the plurality of first insulating layer surfaces and from the plurality of B-material 2Y precipitations deposited on the insulating layer 1 to expose the plurality of first insulating layer surfaces and the plurality of B-material 2Y precipitations deposited on the first insulating layer to define a highly granulated surface. A silicon layer 3 for charge storage electrode is deposited on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.

REFERENCES:
patent: 4927783 (1990-05-01), Arai et al.
Pramanik et al., "VLSI Metallization Using Aluminum and its Alloys", Solid State Technology Mar. 1983, pp. 131-138.
Sankur et al., "Solid Phase epitaxial growth of Si mesar from Al metallization", Appl. Phys. Lett. vol. 22, No. 2, Jan. 1972, pp. 64-66.
McCaldin et al., "Precipitation of Si from the Al Metallization of Integrated Circuits", Appl. Phys. Lett., vol. 20, No. 4, Jan. 1972, pp. 171-172.
Fujishira et al., "Solid Solubility of Si in Al under High Pressure", Japanese Journal of Applied Physics, vol. 15, No. 5, May 1976, pp. 777-783.

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