Apparatus for producing low resistivity tungsten thin film compr

Details Apparatus for producing low resistivity tungsten thin film compr Apparatus for producing low resistivity tungsten thin film compr

1992-07-08

1993-08-03

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

118725, 118712, C23C 1650

Patent

active

052325091

ABSTRACT:
The present invention relates to an apparatus for producing low resistivity tungsten thin films by a plasma enhanced chemical vapor deposition (PECVD) system. The structure of the invented system comprises the conventional PECVD reactor in which diffuser/electrode and hot plate heated by the hot wire and an apparatus to measure the exact surface temperature of monitoring silicon wafers. In order to control the tungsten deposition temperature exactly, two thermocouples encapsulated within the isolation tube extended to common ground outside the reactor to eliminate rf noise, are inserted into the small cavities made on two monitoring wafers, which ar placed in the surface of hot plate. Using the above mentioned system, the present invention is effective to measure and control the exact surface temperature of the silicon substrate; one of the major factors to produce low resistivity tungsten thin films.

REFERENCES:
patent: 4115184 (1978-09-01), Poulsen
patent: 4336277 (1982-06-01), Bunshah et al.
patent: 4396640 (1983-08-01), Rocheleau et al.
patent: 4692343 (1987-09-01), Price et al.
patent: 4714625 (1987-12-01), Chopra et al.
patent: 4980223 (1990-12-01), Nakano et al.
Schmitz et al., "Wafer Temperature in Cold Wall CVD Reactions," Materials Research Society, 1989, pp. 211-217.
Tang et al., "Plasma-Enhanced Chemical Vapor Deposition of .beta.-Tungsten, a Metastable Phase," Appl. Phys. Lett. 45(6), Sep. 15, 1984, pp. 633-635.
Mahowald et al., "Plasma-Enhanced Chemical Vapor Deposition of Tungsten", Thin Solid Films, 170 (1989), pp. 91-97.
Chu et al., "Plasma-enhanced Chemical Vapor Deposition of Tungsten Films", Appl. Phys. Lett. 41(1), Jul. 1, 1982, pp. 75-77.
Stacy et al., "Interfacial Structure of Tungsten Layers Formed by Selective Low Pressure Chemical Vapor Deposition", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 132, No. 2, Feb. 1985, pp. 444-448.

Affiliated with

Also associated with

Rating

Apparatus for producing low resistivity tungsten thin film compr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for producing low resistivity tungsten thin film compr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for producing low resistivity tungsten thin film compr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2267289