Method of manufacturing a dynamic random access memory using MOS

Details Method of manufacturing a dynamic random access memory using MOS Method of manufacturing a dynamic random access memory using MOS

1978-08-04

1979-11-13

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 357 51, B01J 1700

Patent

active

041738195

ABSTRACT:
A dynamic Random Access Memory consisting of pairs of adjacent one transistor/one capacitor memory cells. The gate electrodes of the MOS FETS in each pair of adjacent memory cells are coupled and further connected to an address line at only a single contact hole. There is also disclosed a method for manufacturing the dynamic Random Access Memory with a high integration density. The gap between one electrode of the capacitor and the MOS FET is minimized by converting the end portion of the capacitor electrode to a thin insulating film.

REFERENCES:
patent: 3570114 (1971-03-01), Bean
patent: 3771147 (1973-11-01), Boll
patent: 4012757 (1977-03-01), Koo
patent: 4125933 (1978-11-01), Baldwin

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