Integrated circuit contact and method for fabricating the same

Details Integrated circuit contact and method for fabricating the same Integrated circuit contact and method for fabricating the same

1976-07-06

1979-01-23

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29591, 357 2, 357 65, B01J 1700

Patent

active

041352920

ABSTRACT:
An integrated circuit aluminum-silicon electrical contact may be fabricated in a diffusion region formed in a monocrystalline silicon semiconductor layer by converting the upper portion of the diffusion region into an amorphous region. Alloy pitting is substantially decreased since the solubility of silicon in aluminum is highly dependent upon crystallographic orientation of the silicon and decreases as the silicon approaches an amorphous form. The amorphous region may be formed by implanting arsenic ions with an energy of at least 180 keV and a dosage of approximately 10.sup.15 ions/cm.sup.2.

REFERENCES:
patent: 3679947 (1972-07-01), Chakraverty
patent: 3731372 (1973-05-01), Kraft
patent: 3736192 (1973-05-01), Tokuyama
patent: 3740835 (1973-06-01), Duncan

Affiliated with

Also associated with

Rating

Integrated circuit contact and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit contact and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit contact and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2266725