Method of forming insulator of selectively varying thickness on

Metal working – Method of mechanical manufacture – Assembling or joining

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29580, 148187, 156657, H01L 21465

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045947694

ABSTRACT:
A structure having substantial surface evenness is created by a method in which an insulating layer (24) that has an upward protrusion (26) is formed on a patterned conductive layer (20) having a corresponding upward protrusion (22). A further layer (28) having a generally planar surface is formed on the insulating layer. Using an etchant that attacks the further layer much more than the insulating layer, the further layer is etched to expose at least part of the insulating protrusion. The further layer and the insulating layer (as it becomes exposed) are then etched with an etchant that attacks both of them at rates not substantially different from each other. This brings the upper surface down without exposing the conductive layer, particularly its upward protrusion.

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patent: 4044454 (1977-08-01), Magdo
Adams et al., J. Electrochem. Soc.: Solid-State Sci. and Tech., vol. 128, No. 2, Feb. 1981, pp. 423-429.
Oh et al., Extended Abstracts: 164th Electrochem. Soc. Meeting, vol. 83-2, Wn., D.C., Oct. 9-14, 1983, pp. 327 and 328.
Fried et al., IBM J. Res. Develop., vol. 26, No. 3, May 1982, pp. 362-371.

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